TE28F256J3F105 - 256-Mbit StrataFlash Embedded Memory

Datasheet Summary

Features

Architecture.
Multi-Level Cell Technology: Highest Density at Lowest Cost.
256 symmetrically-sized blocks of 128 Kbytes.
Performance.
95 ns initial access time for Easy BGA.
105 ns initial accsss time for TSOP.
25 ns 16-word Asynchronous page-mode reads.
512-Word Buffer Programming at 1.46MByte/s (Typ).
Voltage and Power.
VCC (Core) = 2.7 V to 3.6 V.
VCCQ (I/O) = 2.7 V to 3.6 V.
Standby.

Numonyx

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Datasheet Details

Part number	TE28F256J3F105
Manufacturer	Numonyx
File Size	647.13 KB
Description	256-Mbit StrataFlash Embedded Memory
Datasheet	TE28F256J3F105 Datasheet
Additional preview pages of the TE28F256J3F105 datasheet.

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Numonyx™ StrataFlash® Embedded Memory (J3-65nm) 256-Mbit Datasheet Product Features Architecture — Multi-Level Cell Technology: Highest Density at Lowest Cost — 256 symmetrically-sized blocks of 128 Kbytes Performance — 95 ns initial access time for Easy BGA — 105 ns initial accsss time for TSOP — 25 ns 16-word Asynchronous page-mode reads — 512-Word Buffer Programming at 1.46MByte/s (Typ) Voltage and Power — VCC (Core) = 2.7 V to 3.6 V — VCCQ (I/O) = 2.7 V to 3.

Published: Dec 15, 2017 |