OCENME OSF12N60C
This Power MOSFET is produced using oTcrueensmeem‘si‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.| Part No. | OSF12N60C |
|---|---|
| Datasheet | OSF12N60C Download |
| Manufacturer | OCENME |
| Description | 600V N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.FEATURES
● 12.0A, 600V, RDS(on) = 0.650Ω @VGS = 10 V● Low gate charge ( typical 52nC)
● High ruggedness
● Fast switching
● 100% avalanche tested
● Improved dv/dt capability {D GDS TO-220 GD S TO-220F
● ◀▲ {G
●
● {S
ABSOLUTE MAXIMUM RATINGS
TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) EAR Repetitive Avalanche Energy (Note 1) dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation (TC = 25°C) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. OTSSPP1122NN6600MC TOSSFF11...
