MD5764802
Overview
The 18/64-Megabit Concurrent Rambus™ DRAMs (RDRAM®) are extremely high-speed CMOS DRAMs organized as 2M or 8M words by 8 or 9 bits. They are capable of bursting unlimited lengths of data at 1.67 ns per byte (13.3 ns per eight bytes).
- Compatible with Base RDRAMs
- 600 MB/s peak transfer rate per RDRAM
- Rambus Signaling Level (RSL) interface
- Synchronous, concurrent protocol for block-oriented, interleaved (overlapped) transfers
- 480 MB/s effective bandwidth for random 32 byte transfers from one RDRAM
- 13 active signals require just 32 total pins on the controller interface (including power)
- 3.3 V operation
- Additional/multiple Rambus Channels each provide an additional 600 MB/s bandwidth
- Two or four 2KByte sense amplifiers may be operated as caches for low latency access
- Random access mode enables any burst order at full bandwidth within a page
