Datasheet4U Logo Datasheet4U.com

MD5764802 - 18Mb (2M x 9) & 64Mb (8M x 8) Concurrent RDRAM

Datasheet Summary

Description

The 18/64-Megabit Concurrent Rambus™ DRAMs (RDRAM®) are extremely high-speed CMOS DRAMs organized as 2M or 8M words by 8 or 9 bits.

They are capable of bursting unlimited lengths of data at 1.67 ns per byte (13.3 ns per eight bytes).

Features

  • Compatible with Base RDRAMs.
  • 600 MB/s peak transfer rate per RDRAM.
  • Rambus Signaling Level (RSL) interface.
  • Synchronous, concurrent protocol for block-oriented, interleaved (overlapped) transfers.
  • 480 MB/s effective bandwidth for random 32 byte transfers from one RDRAM.
  • 13 active signals require just 32 total pins on the controller interface (including power).
  • 3.3 V operation.
  • Additional/multiple Rambus Channels each provid.

📥 Download Datasheet

Datasheet preview – MD5764802

Datasheet Details

Part number MD5764802
Manufacturer OKI electronic componets
File Size 549.62 KB
Description 18Mb (2M x 9) & 64Mb (8M x 8) Concurrent RDRAM
Datasheet download datasheet MD5764802 Datasheet
Additional preview pages of the MD5764802 datasheet.

📁 Similar Datasheet

Other Datasheets by OKI electronic componets
  • MD51V64405 - 16 /777 /216-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
  • MD51V65165 - 4 /194 /304-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
  • MD51V65805 - 8 /388 /608-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
  • MD56V62160 - 4-Bank x 1 /048 /576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM
  • MD56V62160H - 4-Bank x 1 /048 /576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM
  • MD56V62320 - 4-Bank x 524 /288-Word x 32-Bit SYNCHRONOUS DYNAMIC RAM
  • MD56V62400 - 4-Bank x 4 /194 /304-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM
  • MD56V62400H - 4-Bank x 4 /194 /304-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM

Full PDF Text Transcription

Click to expand full text
E2G1059-39-21 ¡ Semiconductor MSM5718C50/MD5764802 ¡ Semiconductor 18Mb (2M ¥ 9) & 64Mb (8M ¥ 8) Concurrent RDRAM This version: Feb. 1999 MSM5718C50/MD5764802 Previous version: Nov. 1998 DESCRIPTION The 18/64-Megabit Concurrent Rambus™ DRAMs (RDRAM®) are extremely high-speed CMOS DRAMs organized as 2M or 8M words by 8 or 9 bits. They are capable of bursting unlimited lengths of data at 1.67 ns per byte (13.3 ns per eight bytes). The use of Rambus Signaling Level (RSL) technology permits 600 MHz transfer rates while using conventional system and board design methodologies. Low effective latency is attained by operating the two or four 2KB sense amplifiers as high speed caches, and by using random access mode (page mode) to facilitate large block transfers.
Published: |