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MSC23140D - DRAM-MODULE

Description

The MSC23140D-xxBS10/DS10 is a fully decoded, 1,048,576-word x 40-bit CMOS dynamic random access memory module composed of ten 4Mb DRAMs in SOJ packages mounted with ten decoupling capacitors on a 72pin glass epoxy single-inline package.

Features

  • 1,048,576-word x 40-bit organization.
  • 72-pin socket insertable module MSC23140D-xxBS10 : Gold tab MSC23140D-xxDS10 : Solder tab.
  • Single +5V supply ± 10% tolerance.
  • Input : TTL compatible.
  • Output : TTL compatible, 3-state.
  • Refresh : 1024cycles/16ms.
  • /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability.
  • Fast page mode capability.
  • Multi-bit test mode capability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr This version: Feb. 23. 1999 Semiconductor MSC23140D-xxBS10/DS10 1,048,576-word x 40-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The MSC23140D-xxBS10/DS10 is a fully decoded, 1,048,576-word x 40-bit CMOS dynamic random access memory module composed of ten 4Mb DRAMs in SOJ packages mounted with ten decoupling capacitors on a 72pin glass epoxy single-inline package. This module supports any application where high density and large capacity of storage memory are required.
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