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MSM514400E - DRAM / FAST PAGE MODE TYPE

General Description

The MSM514400E is a 1,048,576-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology.

The MSM514400E achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process.

Key Features

  • 1,048,576-word × 4-bit configuration Single 5V power supply, ± 10% tolerance Input Output Refresh : TTL compatible, low input capacitance : TTL compatible, 3-state : 1024 cycles/16 ms Fast page mode, read modify write capability CAS before RAS refresh, hidden refresh, RAS-only refresh capability Multi-bit test mode capability Package options: 26/20-pin 300mil plastic SOJ 26/20-pin 300mil plastic TSOP (SOJ2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Semiconductor MSM514400E 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE This version : Sep.2000 DESCRIPTION The MSM514400E is a 1,048,576-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM514400E achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The MSM514400E is available in a 26/20-pin plastic SOJ, 26/20-pin plastic TSOP.