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MSM51V4265E - DRAM / FAST PAGE MODE TYPE

Description

The MSM51V4265E is a 262,144-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology.

Features

  • ∙ 262,144-word × 16-bit configuration ∙ Single 3.3V power supply, ±0.3V tolerance ∙ Input : LVTTL compatible, low input capacitance ∙ Output : LVTTL compatible, 3-state ∙ Refresh : 512 cycles/8ms ∙ Fast page mode with EDO, read modify write capability ∙ CAS before RAS refresh, hidden refresh, RAS-only refresh capability ∙ Packages 40-pin 400mil plastic SOJ (SOJ40-P-400-1.27) (Product : MSM51V4265E-xxJS) 44/40-pin 400mil plastic TSOP (TSOPII44/40-P-400-0.80-K) (Product : MSM51V4265E-xxTS-K) xx in.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FEDD51V4265E-01 1 Semiconductor MSM51V4265E DESCRIPTION This version: June 2001 Previous version :  262,144-Word × 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO The MSM51V4265E is a 262,144-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM51V4265E achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The MSM51V4265E is available in a 40-pin plastic SOJ or 44/40-pin plastic TSOP. FEATURES ∙ 262,144-word × 16-bit configuration ∙ Single 3.3V power supply, ±0.
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