MSM5718C50 Overview
The 18/64-Megabit Concurrent Rambus™ DRAMs (RDRAM®) are extremely high-speed CMOS DRAMs organized as 2M or 8M words by 8 or 9 bits. They are capable of bursting unlimited lengths of data at 1.67 ns per byte (13.3 ns per eight bytes). The use of Rambus Signaling Level (RSL) technology permits 600 MHz transfer rates while using conventional system and board design methodologies.
MSM5718C50 Key Features
- patible with Base RDRAMs
- 600 MB/s peak transfer rate per RDRAM
- Rambus Signaling Level (RSL) interface
- Synchronous, concurrent protocol for block-oriented, interleaved (overlapped) transfers
- 480 MB/s effective bandwidth for random 32 byte transfers from one RDRAM
- 13 active signals require just 32 total pins on the controller interface (including power)
- 3.3 V operation
- Additional/multiple Rambus Channels each provide an additional 600 MB/s bandwidth
- Two or four 2KByte sense amplifiers may be operated as caches for low latency access
- Random access mode enables any burst order at full bandwidth within a page
MSM5718C50 Applications
- patible with Base RDRAMs
- 600 MB/s peak transfer rate per RDRAM
