MSM5432128 Datasheet | OKI Electric

DESCRIPTION This version: Jan. 1998 MSM5432126/8 Previous version: Dec. 1996 Pr el im in ar y 131,072-Word - 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO The MSM5432126/8 is a new generation Graphics DRAM organized in a 131,072-word - 32-bit configuration. The technology used to fabricate the MSM5432126/8 is OKI's CMOS silicon gate process technology. The device operates with a single 5 V power supply. FEATURES - 131,072-word - 32-bit organization - Single 5 V power supply, ± 10% tolerance - Refresh: 512 cycles/8 ms - Fast Page Mode with Extended Data Out (EDO) - Write per bit (MSM5432128 only) - Byte write, Byte read - RAS only refresh - CAS before RAS refresh - Hidden refresh - Package: 64-pin 525 mil plastic SSOP (SSOP64-P-525-0.80-K) (Product : MSM5432126-xx GS-K) (Product : MSM5432128-xx GS-K) xx indicates speed rank. PRODUCT FAMILY Family MSM5432126/8-45 MSM5432126/8-50 MSM5432126/8-60 Access Time (Max.) t RAC t AA t CAC t OEA 45 ns 23 ns 13 ns 13 ns 50 ns 25 ns 15 ns 15 ns 60 ns 30 ns 18 ns 18 ns Cycle Time (Min.) 100 ns 110 ns 130 ns Power Dissipation Operating (Max.) Standby (Max.) 935 m W 907 m W 880 m W 11 m W 1/24 .. ¡ Semiconductor MSM5432126/8 PIN CONFIGURATION (TOP VIEW) VCC DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 VSS DQ8 DQ9 DQ10 DQ11 VCC DQ12 DQ13 DQ14 DQ15 VSS NC NC NC WB- / WE RAS NC A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 VSS DQ31 DQ30 DQ29 DQ28 VCC DQ27 DQ26 DQ25 DQ24 VSS DQ23 DQ22 DQ21 DQ20 VCC DQ19 DQ18 DQ17 DQ16 VSS CAS1 CAS2 CAS3 CAS4 OE A8 A7 A6 A5 A4 VSS 64-Pin Plastic SSOP Pin Name A0 - A8 DQ0 - DQ31 RAS CAS1 - CAS4 WB- / WE OE VCC VSS NC Function Address Input Data Input / Data Output Row Address Strobe Column Address Strobe Write Per Bit- / Write Enable Output Enable Power Supply (5 V) Ground (0 V) No Connection Note: - : The same power supply voltage must be provided...