Datasheet4U Logo Datasheet4U.com

MD56V82160 - SYNCHRONOUS DYNAMIC RAM

General Description

The MD56V82160 is a 4-Bank  4,194,304-word  16-bit Synchronous dynamic RAM.

The device operates at 3.3 V.

The inputs and outputs are LVTTL compatible.

Key Features

  • Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell.
  • 4-Bank  4,194,304-word  16-bit configuration.
  • Single 3.3 V power supply, 0.3 V tolerance.
  • Input : LVTTL compatible.
  • Output : LVTTL compatible.
  • Refresh : 8192 cycles/64 ms.
  • Programmable data transfer mode - CAS Latency (2, 3) - Burst Length (1, 2, 4, 8, Full Page) - Data scramble (sequential, interleave).
  • Auto-refresh, Self-refresh capability.
  • Le.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
OKI Semiconductor MD56V82160 4-Bank  4,194,304-Word  16-Bit SYNCHRONOUS DYNAMIC RAM FEDD56V82160-01 Issue Date:Feb.14, 2008 DESCRIPTION The MD56V82160 is a 4-Bank  4,194,304-word  16-bit Synchronous dynamic RAM. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible. FEATURES • Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell • 4-Bank  4,194,304-word  16-bit configuration • Single 3.3 V power supply, 0.