MD56V82160 Description
The MD56V82160 is a 4-Bank 4,194,304-word 16-bit Synchronous dynamic RAM. The device operates at 3.3 V. The inputs and outputs are LVTTL patible.
MD56V82160 Key Features
- Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell
- 4-Bank 4,194,304-word 16-bit configuration
- Single 3.3 V power supply, 0.3 V tolerance
- Input : LVTTL patible
- Output : LVTTL patible
- Refresh : 8192 cycles/64 ms
- Programmable data transfer mode
- CAS Latency (2, 3)
- Burst Length (1, 2, 4, 8, Full Page)
- Data scramble (sequential, interleave)