DESCRIPTION
Oki’s 0.3 5 µm ASIC products deliver ultra-high performance and high density at low power dissipation. Built in a 0.35 µm drawn CMOS technology (with an L-Effective of 0.27 µm), these SOG devices are available in three layers (MSM13Q) and four layers (MSM14Q) of metal. Up to 66% and 90% of the raw gates can be used for the 3-layer and 4-layer arrays, respectively. Oki’s 0.35 µm family is optimized for 3-V core operation with optimized 3-V I/O buffers and 5-V tolerant 3-V buffers. These SOG products are designed to fit the most popular plastic quad flat packs (QFPs), thin QFPs (TQFPs) , and plastic ball grid array (PBGA) packages. The MSM13Q/14Q Series uses the popular CBA architecture from Silicon Architects of Synopsys which mixes two types of cells (8-transistor compute cells and 4-transistor drive cells) on the same die to deliver high gate density and high drives. The CBA is supported by a rich macro library, optimized for synthesis. Memory blocks are efficiently created by Oki’s memory compilers to generate single- and dual-port RAM’s in high-density and low-power configurations with synchronous RAM options.
