Oki Electric Industry MSM5764802
The 18/64-Megabit Concurrent Rambus™ DRAMs (RDRAM®) are extremely high-speed CMOS DRAMs organized as 2M or 8M words by 8 or 9 bits. They are capable of bursting unlimited lengths of data at 1.67 ns per byte (13.3 ns per eight bytes).| Part No. | MSM5764802 |
|---|---|
| Datasheet | MSM5764802 Download |
| Manufacturer | Oki Electric Industry |
| Description | 18Mb (2M x 9) & 64Mb (8M x 8) Concurrent RDRAM |
| Buy | Stock & Price |
DESCRIPTION
The use of Rambus Signaling Level (RSL) technology permits 600 MHz transfer rates while using conventional system and board design methodologies. Low effective latency is attained by operating the two or four 2KB sense amplifiers as high speed caches, and by using random access mode (page mode) to facilitate large block transfers. Concurrent (simultaneous) bank operations permit high effective bandwidth using interleaved transactions. RDRAMs are general purpose high-performance memory devices suitable for use in a broad range of applications including PC and consumer main memory, graphics, video, and any other application where high-performance at low cost is required.FEATURES
● Compatible with Base RDRAMs● 600 MB/s peak transfer rate per RDRAM
● Rambus Signaling Level (RSL) interface
● Synchronous, concurrent protocol for block-oriented, interleaved (overlapped) transfers
● 480 MB/s effective bandwidth for random 32 byte transfers from one RDRAM
● 13 active signals requi...
