1HN04CH - Power MOSFET

Datasheet Summary

Features

4V drive.
Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Value Unit Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature VDSS VGSS ID IDP PD Tj PW10s, duty cycle1% When mounted on ceramic substrate (900mm20.8mm) 100 20 270 1080 0.6 150 V V mA mA W C Storage Temperature Tstg This product is designed to “ESD immunity < 200V.
”, so p.

ON Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	1HN04CH
Manufacturer	ON Semiconductor
File Size	392.41 KB
Description	Power MOSFET
Datasheet	1HN04CH Datasheet
Additional preview pages of the 1HN04CH datasheet.

📁 Similar Datasheet

1HN04CH - N-Channel MOSFET (Sanyo Semicon Device)

Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text

Ordering number : ENA0925C 1HN04CH Power MOSFET 100V, 8Ω, 270mA, Single N-Channel http://onsemi.com Features  4V drive  Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Value Unit Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature VDSS VGSS ID IDP PD Tj PW10s, duty cycle1% When mounted on ceramic substrate (900mm20.8mm) 100 20 270 1080 0.6 150 V V mA mA W C Storage Temperature Tstg This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model 55 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device.

Published: Sep 23, 2016 |