Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Symbol
Conditions
Value
Unit
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature
VDSS VGSS ID IDP PD Tj
PW10s, duty cycle1% When mounted on ceramic substrate (900mm20.8mm)
100 20 270 1080 0.6 150
V V mA mA W C
Storage Temperature
Tstg
This product is designed to “ESD immunity < 200V.
Full PDF Text Transcription for 1HN04CH (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
1HN04CH. For precise diagrams, and layout, please refer to the original PDF.
Ordering number : ENA0925C 1HN04CH Power MOSFET 100V, 8Ω, 270mA, Single N-Channel http://onsemi.com Features 4V drive Halogen free compliance Specifications Absolute ...
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Features 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Value Unit Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature VDSS VGSS ID IDP PD Tj PW10s, duty cycle1% When mounted on ceramic substrate (900mm20.8mm) 100 20 270 1080 0.6 150 V V mA mA W C Storage Temperature Tstg This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model 55 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
1HN04CH Datasheet
