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1N4454 - High Conductance Ultra Fast Diode

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Datasheet Details

Part number 1N4454
Manufacturer onsemi
File Size 142.51 KB
Description High Conductance Ultra Fast Diode
Datasheet download datasheet 1N4454 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET www.onsemi.com High Conductance Ultra Fast Diode 1N4454 Sourced from Process 1R. See MMBD1201−1205 for characteristics. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) (Notes 1, 2, 3) Symbol Rating Value Unit WIV IO IF if if(surge) Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 1.0 s Pulse Width = 1.0 ms 50 V 200 mA 400 mA 600 mA A 1.0 4.0 TSTG Storage Temperature Range −65 to +200 °C TJ Operating Junction Temperature 175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1.