20P03HL - Power MOSFET

Datasheet Summary

Features

Avalanche Energy Specified.
Source.
to.
Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode.
Diode is Characterized for Use in Bridge Circuits.
IDSS and VDS(on) Specified at Elevated Temperature.
Pb.
Free Packages are Available http://onsemi. com V(BR)DSS 30 V RDS(on) TYP 90 mW@5.0 V ID MAX 20 A (Note 1) P.
Channel D G.

ON Semiconductor

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Datasheet Details

Part number	20P03HL
Manufacturer	ON Semiconductor
File Size	84.88 KB
Description	Power MOSFET
Datasheet	20P03HL Datasheet
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Full PDF Text Transcription

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MTD20P03HDL Preferred Device Power MOSFET 20 Amps, 30 Volts, Logic Level P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

Published: Dec 19, 2018 |