2N5209 Datasheet | onsemi

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5209/D Amplifier Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 2N5209 2N5210 1 2 3 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 50 50 4.0 50 625 5.0 1.5 12 - 55 to +150 Unit Vdc Vdc Vdc m Adc m W m W/°C Watts m W/°C °C CASE 29- 04, STYLE 1 TO- 92 (TO- 226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol Rq JA Rq JC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = 1.0 m Adc, IB = 0) Collector - Base Breakdown Voltage (IC = 0.1 m Adc, IE = 0) Collector Cutoff Current (VCB = 35 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO ICBO IEBO 50 50 - - - - 50 50 Vdc Vdc n Adc n Adc Motorola Small- Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 2N5209 2N5210 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS...