2N6034G
2N6034G is Plastic Darlington Complementary Silicon Power Transistors manufactured by onsemi.
Features
- ESD Ratings: Machine Model, C; > 400 V
Human Body Model, 3B; > 8000 V
- Epoxy Meets UL 94 V- 0 @ 0.125 in
- These Devices are Pb- Free and are Ro HS pliant-
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector- Emitter Voltage 2N6034G 2N6035G, 2N6038G 2N6036G, 2N6039G
VCEO
Vdc
Collector- Base Voltage 2N6034G 2N6035G, 2N6038G 2N6036G, 2N6039G
VCBO
Vdc
Emitter- Base Voltage Collector Current
- Continuous
Collector Current
- Peak
Base Current
Total Device Dissipation @ TC = 25°C Derate above 25°C
VEBO IC ICM IB PD
5.0 Vdc 4.0 Adc 8.0 Apk 100 m Adc
40 W 320 m W/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD 1.5 W
12 m W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
- 65 to + 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS Characteristic
Thermal Resistance, Junction- to- Case Thermal Resistance, Junction- to-...
