• Part: 2N6426
  • Description: Darlington Transistors
  • Manufacturer: onsemi
  • Size: 78.96 KB
Download 2N6426 Datasheet PDF
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Datasheet Summary

2N6426, 2N6427 2N6426 is a Preferred Device Darlington Transistors NPN Silicon Features - These are Pb- Free Devices- MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Symbol VCEO VCBO VEBO IC PD Value 40 40 12 500 625 5.0 Unit Vdc Vdc Vdc mAdc mW mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 W Derate above 25°C 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg - 55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction- to- Ambient RqJA 200 °C/W Thermal Resistance, Junction- to-...