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2N6487 - COMPLEMENTARY SILICON POWER TRANSISTORS

Key Features

  • High DC Current Gain.
  • High Current Gain.
  • Bandwidth Product.
  • TO.
  • 220 Compact Package.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet Details

Part number 2N6487
Manufacturer onsemi
File Size 84.61 KB
Description COMPLEMENTARY SILICON POWER TRANSISTORS
Datasheet download datasheet 2N6487 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • High DC Current Gain • High Current Gain − Bandwidth Product • TO−220 Compact Package • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector−Emitter Voltage 2N6487, 2N6490 2N6488, 2N6491 VCEO 60 80 Vdc Collector−Base Voltage 2N6487, 2N6490 2N6488, 2N6491 VCB Vdc 70 90 Emitter−Base Voltage Collector Current − Continuous Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C VEB 5.0 Vdc IC 15 Adc IB 5.0 Adc PD 75 W 0.6 W/°C Total Power Dissipation @ TA = 25_C Derate above 25_C PD 1.8 W 0.