2N6497 - POWER TRANSISTORS NPN SILICON

onsemi

Datasheet Details

Part number	2N6497
Manufacturer	onsemi
File Size	148.85 KB
Description	POWER TRANSISTORS NPN SILICON
Datasheet	2N6497 Datasheet

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6497/D High Voltage NPN Silicon Power Transistors . . . designed for high voltage inverters, switching regulators and line–operated amplifier applications. Especially well suited for switching power supply applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 250 Vdc (Min) — 2N6497 VCEO(sus) = 300 Vdc (Min) — 2N6498 • Excellent DC Current Gain hFE = 10 – 75 @ IC = 2.5 Adc • Low Collector–Emitter Saturation Voltage @ IC = 2.5 Adc — VCE(sat) = 1.0 Vdc (Max) — 2N6497 VCE(sat) = 1.