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2N6667, 2N6668 Darlington Silicon Power Transistors
Designed for general−purpose amplifier and low speed switching applications.
• High DC Current Gain − • • • • • •
hFE = 3500 (Typ) @ IC = 4.0 Adc Collector−Emitter Sustaining Voltage − @ 200 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6667 = 80 Vdc (Min) − 2N6668 Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max)@ IC = 5.0 Adc Monolithic Construction with Built−In Base−Emitter Shunt Resistors TO−220AB Compact Package Complementary to 2N6387, 2N6388 Pb−Free Packages are Available*
http://onsemi.com
PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60−80 V, 65 W
MARKING DIAGRAM
4
COLLECTOR 1 2 3
STYLE 1: PIN 1. 2. 3. 4.
2N6667 Datasheet
