Datasheet Summary
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2N6667, 2N6668 Darlington Silicon Power Transistors
Designed for general- purpose amplifier and low speed switching applications.
- High DC Current Gain
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- hFE = 3500 (Typ) @ IC = 4.0 Adc Collector- Emitter Sustaining Voltage
- @ 200 mAdc VCEO(sus) = 60 Vdc (Min)
- 2N6667 = 80 Vdc (Min)
- 2N6668 Low Collector- Emitter Saturation Voltage
- VCE(sat) = 2.0 Vdc (Max)@ IC = 5.0 Adc Monolithic Construction with Built- In Base- Emitter Shunt Resistors TO- 220AB pact Package plementary to 2N6387, 2N6388 Pb- Free Packages are Available- http://onsemi.
PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60- 80 V, 65 W
MARKING DIAGRAM
COLLECTOR 1 2 3
STYLE 1: PIN 1....
