2SA1705 - Bipolar Transistor

onsemi

Key Features

Adoption of FBET process.
Fast switching speed Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Conditions Ratings --60 --50 --5 --1 --2 0.9 150 --55 to +150 Unit V V V A A W °C °C Stresses exceeding Maximum Ratings may damage the d.

2SA1705 bipolar transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	2SA1705
Manufacturer	onsemi
File Size	527.81 KB
Description	Bipolar Transistor
Datasheet	2SA1705 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN3025A 2SA1705 Bipolar Transistor -50V, -1A, Low VCE(sat), PNP Single NMP http://onsemi.com Applicaitons • Voltage regulators, relay drivers, lamp drivers Features • Adoption of FBET process • Fast switching speed Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Conditions Ratings --60 --50 --5 --1 --2 0.9 150 --55 to +150 Unit V V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.