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2SA1706 - Bipolar Transistor

Datasheet Summary

Features

  • Adoption of FBET, MBIT processes.
  • Large current capacity and wide ASO.
  • Fast switching speed Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Conditions Ratings --60 --50 --6 --2 --4 1 150 --55 to +150 Unit V V V A A W °C °C.

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Datasheet Details

Part number 2SA1706
Manufacturer ON Semiconductor
File Size 524.36 KB
Description Bipolar Transistor
Datasheet download datasheet 2SA1706 Datasheet
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Full PDF Text Transcription

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Ordering number : EN3026B 2SA1706 Bipolar Transistor –50V, –2A, Low VCE(sat), PNP Single NMP http://onsemi.com Applicaitons • Voltage regulators, relay drivers, lamp drivers Features • Adoption of FBET, MBIT processes • Large current capacity and wide ASO • Fast switching speed Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Conditions Ratings --60 --50 --6 --2 --4 1 150 --55 to +150 Unit V V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.
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