2SA1768 - Bipolar Transistor

onsemi

Key Features

Adoption of MBIT process.
High breakdown voltage, large current capacity.
Fast switching speed Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Conditions Ratings --180 --160 --6 --0.7 --1.5 1 150 --55 to +150 Unit V V V A A.

2SA1768 bipolar transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	2SA1768
Manufacturer	onsemi
File Size	527.64 KB
Description	Bipolar Transistor
Datasheet	2SA1768 Datasheet

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2SA1705	Bipolar Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN3582A 2SA1768 Bipolar Transistor –180V, –160A, Low VCE(sat) PNP Single NMP http://onsemi.com Applicaitons • Color TV sound output, converter, inverter Features • Adoption of MBIT process • High breakdown voltage, large current capacity • Fast switching speed Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Conditions Ratings --180 --160 --6 --0.7 --1.5 1 150 --55 to +150 Unit V V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.