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2SA2210 - Bipolar Transistor

Key Features

  • Adoption of MBIT processes.
  • Low collector-to-emitter saturation voltage.
  • Large current capacitance.
  • High-speed switching Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current VCBO VCEO VEBO IC ICP IB Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Tc=25°C Conditions Ratings.

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Datasheet Details

Part number 2SA2210
Manufacturer onsemi
File Size 182.64 KB
Description Bipolar Transistor
Datasheet download datasheet 2SA2210 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA0667B 2SA2210 Bipolar Transistor –50V, –20A, Low VCE(sat) PNP TO-220F-3SG http://onsemi.com Applications • Relay drivers, lamp drivers, motor drivers. Features • Adoption of MBIT processes • Low collector-to-emitter saturation voltage • Large current capacitance • High-speed switching Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current VCBO VCEO VEBO IC ICP IB Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Tc=25°C Conditions Ratings --50 --50 --6 --20 --25 --3 2 30 150 --55 to +150 Unit V V V A A A W W °C °C Stresses exceeding Maximum Ratings may damage the device.