2SB1229
Features
- Adoption of FBET, MBIT processes.
- Large current capacity.
- Low collector-to-emitter saturation voltage.
- Fast switching time.
Package Dimensions unit:mm 2003B
[2SB1229/2SD1835]
5.0 4.0 4.0
0.45 0.5 0.45 0.44
0.6 2.0 14.0 5.0
( ) : 2SB1229
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product Output Capacitance
Collector-to-Emitter Saturation Voltage
ICBO IEBO h FE1 h FE2 f T Cob
VCB=(- )50V, IE=0 VEB=(- )4V, IC=0 VCE=(- )2V, IC=(- )100m A VCE=(- )2V, IC=(- )1.5A VCE=(- )10V, IC=(- )50m A VCB=(- )10V, f=1MHz
VCE(sat) IC=(- )1A, IB=(- )50m A
123 1.3 1.3
1 : Emitter 2 :...
