2SC5231A - RF Transistor

onsemi

Key Features

Low-noise : NF=1.0dB typ (f=1GHz).
High gain : ⏐S21e⏐2=12dB typ (f=1GHz).
High cut-off frequency : fT=7GHz typ.
Ultrasmall-sized package permitting applied sets to be made small and slim Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Condition.

2SC5231A rf transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	2SC5231A
Manufacturer	onsemi
File Size	414.52 KB
Description	RF Transistor
Datasheet	2SC5231A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1077A 2SC5231A RF Transistor 10V, 70mA, fT=7GHz, NPN Single SMCP http://onsemi.com Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ • Ultrasmall-sized package permitting applied sets to be made small and slim Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings 20 10 2 70 100 150 --55 to +150 Unit V V V mA mW °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.