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2SC5245A - RF Transistor

Key Features

  • Low-noise : NF=0.9dB typ (f=1GHz).
  • High gain : NF=1.4dB typ (f=1.5GHz) : ⏐S21e⏐2=10dB typ (f=1.5GHz).
  • High cut-off frequency : fT=8GHz typ.
  • Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=3.5GHz typ : ⏐S21e⏐2=5.5dB typ (f=1.5GHz) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature VCBO.

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Datasheet Details

Part number 2SC5245A
Manufacturer onsemi
File Size 244.52 KB
Description RF Transistor
Datasheet download datasheet 2SC5245A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1074A 2SC5245A RF Transistor 10V, 30mA, fT=8GHz, NPN Single MCP http://onsemi.com Features • Low-noise : NF=0.9dB typ (f=1GHz) • High gain : NF=1.4dB typ (f=1.5GHz) : ⏐S21e⏐2=10dB typ (f=1.5GHz) • High cut-off frequency : fT=8GHz typ • Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=3.5GHz typ : ⏐S21e⏐2=5.5dB typ (f=1.5GHz) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature VCBO VCEO VEBO IC PC Tj Storage Temperature Tstg Conditions Ratings 20 10 1.5 30 150 150 --55 to +150 Unit V V V mA mW °C °C Stresses exceeding Maximum Ratings may damage the device.