2SC5501A - RF Transistor

onsemi

Key Features

Low-noise : NF=1.0dB typ (f=1GHz).
High gain : ⏐S21e⏐2=13dB typ (f=1GHz).
High cut-off frequency : fT=7GHz typ.
Large allowable collector dissipation : PC=500mW max Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions When mounted on cera.

2SC5501A rf transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	2SC5501A
Manufacturer	onsemi
File Size	244.96 KB
Description	RF Transistor
Datasheet	2SC5501A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1061A 2SC5501A RF Transistor 10V, 70mA, fT=7GHz, NPN Single MCP4 http://onsemi.com Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=13dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ • Large allowable collector dissipation : PC=500mW max Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions When mounted on ceramic substrate (250mm2×0.8mm) Ratings 20 10 2 70 500 150 --55 to +150 Unit V V V mA mW °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.