• Part: 2SC5501A
  • Description: RF Transistor
  • Category: Transistor
  • Manufacturer: onsemi
  • Size: 244.96 KB
Download 2SC5501A Datasheet PDF
onsemi
2SC5501A
Features - Low-noise : NF=1.0d B typ (f=1GHz) - High gain : ⏐S21e⏐2=13d B typ (f=1GHz) - High cut-off frequency : f T=7GHz typ - Large allowable collector dissipation : PC=500m W max Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions When mounted on ceramic substrate (250mm2×0.8mm) Ratings 20 10 2 70 500 150 --55 to +150 Unit V V V m A m W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7025A-001 2.0 1.3 2SC5501A-4-TR-E 0 to 0.08 Product & Package Information - Package : MCP4 -...