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2SC5536A - RF Transistor

Key Features

  • Low-noise : NF=1.8dB typ (f=150MHz).
  • High gain : ⏐S21e⏐2=16dB typ (f=150MHz).
  • Ultrasmall, slim flat-lead package (1.4mm×0.8mm×0.6mm).
  • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings 20 12 2 50 100 150.

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Datasheet Details

Part number 2SC5536A
Manufacturer onsemi
File Size 420.45 KB
Description RF Transistor
Datasheet download datasheet 2SC5536A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1092A 2SC5536A RF Transistor 12V, 50mA, fT=1.7GHz, NPN Single SSFP http://onsemi.com Features • Low-noise : NF=1.8dB typ (f=150MHz) • High gain : ⏐S21e⏐2=16dB typ (f=150MHz) • Ultrasmall, slim flat-lead package (1.4mm×0.8mm×0.6mm) • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings 20 12 2 50 100 150 --55 to +150 Unit V V V mA mW °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.