2SC5646A - RF Transistor

onsemi

Key Features

Low-noise : NF=1.5dB typ (f=2GHz).
High cut-off frequency : fT=10GHz typ (VCE=1V) : fT=12.5GHz typ (VCE=3V).
Low-voltage operation.
High gain : ⏐S21e⏐2=9.5dB typ (f=2GHz).
Ultrasmall, slim ﬂat-lead package (1.4mm×0.8mm×0.6mm).
Halogen free compliance Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissip.

2SC5646A rf transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	2SC5646A
Manufacturer	onsemi
File Size	380.48 KB
Description	RF Transistor
Datasheet	2SC5646A Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SC5646	NPN TRANSISTOR	Sanyo Semicon Device
2SC5640	NPN SIlicon Transistor	ROHM
2SC5645	NPN TRANSISTOR	Sanyo Semicon Device
2SC5604	NPN SILICON RF TRANSISTOR	NEC
2SC5606	NPN TRANSISTOR	NEC

Other Datasheets by onsemi

Part Number	Description
2SC5658M3T5G	NPN Silicon General Purpose Amplifier Transistor
2SC5658RM3T5G	NPN Silicon General Purpose Amplifier Transistor
2SC5200	NPN Transistor
2SC5226A	RF Transistor
2SC5227A	RF Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Ordering number : ENA1120A 2SC5646A RF Transistor 4V, 30mA, fT=12.5GHz, NPN Single SSFP http://onsemi.com Features • Low-noise : NF=1.5dB typ (f=2GHz) • High cut-off frequency : fT=10GHz typ (VCE=1V) : fT=12.5GHz typ (VCE=3V) • Low-voltage operation • High gain : ⏐S21e⏐2=9.5dB typ (f=2GHz) • Ultrasmall, slim ﬂat-lead package (1.4mm×0.8mm×0.6mm) • Halogen free compliance Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature VCBO VCEO VEBO IC PC Tj Storage Temperature Tstg Conditions Ratings 9 4 2 30 100 150 --55 to +150 Unit V V V mA mW °C °C Stresses exceeding Maximum Ratings may damage the device.