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2SC5706 - Bipolar Transistor

Key Features

  • Adoption of FBET and MBIT processes Low collector-to-emitter saturation voltage.
  • Large current capacitance High-speed switching.
  • High allowable power dissipation Specifications ( ): 2SA2039 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCES VCEO VEBO IC ICP Conditions Ratings (--50)10.

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Datasheet Details

Part number 2SC5706
Manufacturer onsemi
File Size 452.38 KB
Description Bipolar Transistor
Datasheet download datasheet 2SC5706 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN6912D 2SA2039/2SC5706 Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications • http://onsemi.com DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features • • Adoption of FBET and MBIT processes Low collector-to-emitter saturation voltage • • Large current capacitance High-speed switching • High allowable power dissipation Specifications ( ): 2SA2039 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCES VCEO VEBO IC ICP Conditions Ratings (--50)100 (--50)100 (--)50 (--)6 (--)5 (--)7.5 Unit V V V V A A Continued on next page.