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2SC6017 - Bipolar Transistor

Datasheet Summary

Features

  • Adoption of MBIT processes.
  • Low collector-to-emitter saturation voltage.
  • Large current capacity.
  • High-speed switching Specifications ( ): 2SA2169 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP PW≤100μs Conditions Ratings (--50)100 (--)50 (--)6 (--)10 (--)13 Unit V V V A A Continued on next page. Packa.

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Datasheet Details

Part number 2SC6017
Manufacturer ON Semiconductor
File Size 342.59 KB
Description Bipolar Transistor
Datasheet download datasheet 2SC6017 Datasheet
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Full PDF Text Transcription

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Ordering number : EN8275A 2SA2169/2SC6017 Bipolar Transistor (-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA http://onsemi.com Applications • Relay drivers, lamp drivers, motor drivers Features • Adoption of MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity • High-speed switching Specifications ( ): 2SA2169 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP PW≤100μs Conditions Ratings (--50)100 (--)50 (--)6 (--)10 (--)13 Unit V V V A A Continued on next page. Package Dimensions unit : mm (typ) 7518-003 Package Dimensions unit : mm (typ) 7003-003 6.5 5.0 4 2.3 0.5 2SA2169-E 2SC6017-E 6.
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