2SC6082
Features
- Adoption of MBIT process
- Low collector-to-emitter saturation voltage
- Large current capacitance
- High-speed switching
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current
VCBO VCES VCEO VEBO IC ICP IB
Collector Dissipation
Junction Temperature Storage Temperature
Tj Tstg
Conditions
PW≤10μs, duty cycle≤1% Tc=25°C
Ratings 60 60 50 6 15 20 3 2 23
150 --55 to +150
Unit V V V V A A A W W °C °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability.
15.8 3.23
Package Dimensions unit : mm (typ) 7529-002
10.16 3.18
1.47 MAX 0.8 123
2.54 2.54
3.3 15.87
4.7 2.54
2SC6082-1E...
