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2SD1060 - Bipolar Transistor

Key Features

  • Low collector-to-emitter saturation voltage : VCE(sat)=0.3V max / IC=3A, IB= 0.3A Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions Ratings 60 50 6 5 9 1.75 30 150 --55 to +150 Unit V V V A A W W °C °C Stresses exceeding Maximum.

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Datasheet Details

Part number 2SD1060
Manufacturer onsemi
File Size 128.88 KB
Description Bipolar Transistor
Datasheet download datasheet 2SD1060 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN686K 2SD1060 Bipolar Transistor 50V, 5A, Low VCE(sat) NPN TO-220-3L http://onsemi.com Applications • Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching Features • Low collector-to-emitter saturation voltage : VCE(sat)=0.3V max / IC=3A, IB= 0.3A Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions Ratings 60 50 6 5 9 1.75 30 150 --55 to +150 Unit V V V A A W W °C °C Stresses exceeding Maximum Ratings may damage the device.