2SD1207 - PNP / NPN Epitaxial Planar Silicon Transistors

onsemi

Key Features

FBET and MBIT processed (Original process of SANYO).
Low saturation voltage.
Large current capacity and wide ASO. Specifications ( ) : 2SB892 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta=25°C Conditions P.

2SD1207 pnp / npn epitaxial planar silicon transistors by onsemi - Datasheet Preview

Datasheet Details

Part number	2SD1207
Manufacturer	onsemi
File Size	87.94 KB
Description	PNP / NPN Epitaxial Planar Silicon Transistors
Datasheet	2SD1207 Datasheet

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2SB892 / 2SD1207 Ordering number : EN930D 2SB892 / 2SD1207 PNP / NPN Epitaxial Planar Silicon Transistors Large-Current Switching Applications Applications • Power supplies, relay drivers, lamp drivers, and automotive wiring. Features • FBET and MBIT processed (Original process of SANYO). • Low saturation voltage. • Large current capacity and wide ASO.