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2SD600K - PNP / NPN Epitaxial Planar Silicon Transistors

This page provides the datasheet information for the 2SD600K, a member of the 2SD600 PNP / NPN Epitaxial Planar Silicon Transistors family.

Datasheet Summary

Features

  • High breakdown voltage VCEO 100/120V, High current 1A.
  • Low saturation voltage, excellent hFE linearity. Package Dimensions unit:mm 2009B [2SB631, 631K/2SD600, 600K] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SB631, 631K Specifications 12 3 2.4 4.8 1.2 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Co.

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Datasheet preview – 2SD600K

Datasheet Details

Part number 2SD600K
Manufacturer ON Semiconductor
File Size 94.38 KB
Description PNP / NPN Epitaxial Planar Silicon Transistors
Datasheet download datasheet 2SD600K Datasheet
Additional preview pages of the 2SD600K datasheet.

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Full PDF Text Transcription

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Ordering number : ENN346G 2SB631, 631K/ 2SD600, 600K PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amplifier Applications Features · High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity. Package Dimensions unit:mm 2009B [2SB631, 631K/2SD600, 600K] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SB631, 631K Specifications 12 3 2.4 4.8 1.
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