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2SJ661 - P-Channel Power MOSFET

Key Features

  • ON-resistance RDS(on)1=29.5mΩ(typ. ).
  • 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Package Dimensions unit : mm (typ) 7537-001.
  • Input capacitance Ciss=4360pF (typ. ) Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings --60 ±20 --38 --152 1.65 65 Unit V V A A W W Continued on next page. Packa.

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Datasheet Details

Part number 2SJ661
Manufacturer onsemi
File Size 289.79 KB
Description P-Channel Power MOSFET
Datasheet download datasheet 2SJ661 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN8586A 2SJ661 P-Channel Power MOSFET –60V, –38A, 39mΩ, TO-262-3L/TO-263-2L http://onsemi.com Features • ON-resistance RDS(on)1=29.5mΩ(typ.) • 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Package Dimensions unit : mm (typ) 7537-001 • Input capacitance Ciss=4360pF (typ.) Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings --60 ±20 --38 --152 1.65 65 Unit V V A A W W Continued on next page. Package Dimensions unit : mm (typ) 7535-001 2SJ661-1E 2SJ661-DL-1E 10.0 4.5 8.0 1.3 10.0 4.5 8.0 1.3 4 0.9 1.75 1.4 9.2 1.2 13.4 0.9 1.75 3.0 9.2 1.2 1.35 7.9 7.9 5.3 3.0 1.47 1.27 0.8 0.