2SK3707
2SK3707 is N-Channel Power MOSFET manufactured by onsemi.
Features
- ON-resistance RDS(on)1=45mΩ (typ.)
- 4V drive
- Input capacitance Ciss=2150p F (typ.)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
VDSS VGSS ID IDP
Allowable Power Dissipation
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse)
- 1
Avalanche Current
- 2
Note :- 1 VDD=20V, L=500μH, IAV=20A (Fig.1)
- 2 L≤500μH, Single pulse
Conditions
PW≤10μs, duty cycle≤1% Tc=25°C
Ratings 100 ±20 20 80 2.0 25 150
--55 to +150 125 20
Unit V V A A W W °C °C m J A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability.
Package Dimensions unit : mm (typ) 7529-001
10.16 3.18
4.7 2.54
2SK3707-1E
Product & Package Information
- Package
: TO-220F-3SG
- JEITA, JEDEC
: SC-67
- Minimum Packing Quantity : 50...
