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2SK3707 - N-Channel Power MOSFET

Key Features

  • ON-resistance RDS(on)1=45mΩ (typ. ).
  • 4V drive.
  • Input capacitance Ciss=2150pF (typ. ) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
  • 1 EAS Avalanche Current.
  • 2 IAV Note :.
  • 1 VDD=20V, L=500μH, IAV=20A (Fig.1).

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Datasheet Details

Part number 2SK3707
Manufacturer onsemi
File Size 188.24 KB
Description N-Channel Power MOSFET
Datasheet download datasheet 2SK3707 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN7706A 2SK3707 N-Channel Power MOSFET 100V, 20A, 60mΩ, TO-220F-3SG http://onsemi.com Features • ON-resistance RDS(on)1=45mΩ (typ.) • 4V drive • Input capacitance Ciss=2150pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=20V, L=500μH, IAV=20A (Fig.1) *2 L≤500μH, Single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 100 ±20 20 80 2.0 25 150 --55 to +150 125 20 Unit V V A A W W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device.