2SK3944 - N-Channel Silicon MOSFET

onsemi

Key Features

Low ON-resistance.
Ultrahigh-speed switching.
4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (250mm2✕0.8mm) Tc=25°C Ratings 60 ±20 2 8 1 3.5 150 --55 to +150 Unit V V A A W W °C °C Elect.

2SK3944 n-channel silicon mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	2SK3944
Manufacturer	onsemi
File Size	93.14 KB
Description	N-Channel Silicon MOSFET
Datasheet	2SK3944 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SK3944	N-Channel Silicon MOSFET	Sanyo Semicon Device
2SK3944	N-Channel 60V MOSFET	VBsemi
2SK3940	N-Channel MOSFET Transistor	Inchange Semiconductor
2SK3940	N-Channel MOSFET	Toshiba
2SK3943	SWITCHING N-CHANNEL POWER MOSFET	NEC

Other Datasheets by onsemi

Part Number	Description
2SK3492	N-Channel Silicon MOSFET
2SK3557	N-Channel JFET
2SK3615	N-Channel Silicon MOSFET
2SK3666	N-Channel JFET
2SK3703	N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2SK3944 Ordering number : ENN8330 2SK3944 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (250mm2✕0.8mm) Tc=25°C Ratings 60 ±20 2 8 1 3.