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2SK4065 - N-Channel Power MOSFET

Key Features

  • ON-resistance RDS(on)1=4.6mΩ (typ. ).
  • 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
  • 1 Avalanche Current.
  • 2 EAS IAV Note :.
  • 1 VDD=30V, L=200μH, IAV=70A (Fig.1).
  • 2 L≤200μH, single pulse.
  • Input ca.

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Datasheet Details

Part number 2SK4065
Manufacturer onsemi
File Size 225.64 KB
Description N-Channel Power MOSFET
Datasheet download datasheet 2SK4065 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA0324A 2SK4065 N-Channel Power MOSFET 75V, 100A, 6mΩ, TO-263-2L http://onsemi.com Features • ON-resistance RDS(on)1=4.6mΩ (typ.) • 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 Avalanche Current *2 EAS IAV Note :*1 VDD=30V, L=200μH, IAV=70A (Fig.1) *2 L≤200μH, single pulse • Input capacitance Ciss=12200pF (typ.) Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 75 ±20 100 400 1.65 90 150 --55 to +150 735 70 Unit V V A A W W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device.