Datasheet4U Logo Datasheet4U.com

2SK4088LS - N-Channel Power MOSFET

Key Features

  • ON-resistance RDS(on)=0.65Ω (typ. ).
  • 10V drive.
  • Input capacitance Ciss=1000pF (typ. ) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain to Source Voltage VDSS 650 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) IDc.
  • 1 IDpack.
  • 2 Limited only by maximum temperature Tch=150°C Tc=25°C (Our ideal heat dissipation condition).
  • 3 11 A 7.5 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 40 A.

📥 Download Datasheet

Datasheet Details

Part number 2SK4088LS
Manufacturer onsemi
File Size 185.51 KB
Description N-Channel Power MOSFET
Datasheet download datasheet 2SK4088LS Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK4088LS N-Channel Silicon MOSFET Sanyo Semicon Device
2SK4088LS N-Channel MOSFET Transistor Inchange Semiconductor
2SK408 N-Channel MOSFET Hitachi Semiconductor
2SK4080 MOS FIELD EFFECT TRANSISTOR NEC
2SK4081 SWITCHING N-CHANNEL POWER MOSFET NEC

Other Datasheets by onsemi

Part Number Description
2SK4085LS N-Channel Power MOSFET
2SK4087LS N-Channel Power MOSFET
2SK4065 N-Channel Power MOSFET
2SK4066 N-Channel Power MOSFET
2SK4094 N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number : ENA0556D 2SK4088LS N-Channel Power MOSFET 650V, 11A, 0.85Ω, TO-220F-3FS http://onsemi.com Features • ON-resistance RDS(on)=0.65Ω (typ.) • 10V drive • Input capacitance Ciss=1000pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain to Source Voltage VDSS 650 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) IDc*1 IDpack*2 Limited only by maximum temperature Tch=150°C Tc=25°C (Our ideal heat dissipation condition)*3 11 A 7.5 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 40 A Allowable Power Dissipation PD Tc=25°C (Our ideal heat dissipation condition)*3 2.