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2SK4099LS - N-Channel Power MOSFET

Key Features

  • ON-resistance RDS(on)=0.72Ω (typ. ).
  • 10V drive.
  • Input capacitance Ciss=750pF Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain to Source Voltage VDSS 600 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) IDc.
  • 1 IDpack.
  • 2 Limited only by maximum temperature Tch=150°C Tc=25°C (Our ideal heat dissipation condition).
  • 3 8.5 A 6.9 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 34 A Allowab.

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Datasheet Details

Part number 2SK4099LS
Manufacturer onsemi
File Size 185.56 KB
Description N-Channel Power MOSFET
Datasheet download datasheet 2SK4099LS Datasheet

Full PDF Text Transcription (Reference)

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Ordering number : ENA0777C 2SK4099LS N-Channel Power MOSFET 600V, 8.5A, 0.94Ω, TO-220F-3FS http://onsemi.com Features • ON-resistance RDS(on)=0.72Ω (typ.) • 10V drive • Input capacitance Ciss=750pF Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain to Source Voltage VDSS 600 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) IDc*1 IDpack*2 Limited only by maximum temperature Tch=150°C Tc=25°C (Our ideal heat dissipation condition)*3 8.5 A 6.9 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 34 A Allowable Power Dissipation PD Tc=25°C (Our ideal heat dissipation condition)*3 2.