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Ordering number : ENA0777C
2SK4099LS
N-Channel Power MOSFET
600V, 8.5A, 0.94Ω, TO-220F-3FS
http://onsemi.com
Features
• ON-resistance RDS(on)=0.72Ω (typ.) • 10V drive
• Input capacitance Ciss=750pF
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain to Source Voltage
VDSS
600 V
Gate to Source Voltage
VGSS
±30 V
Drain Current (DC)
IDc*1 IDpack*2
Limited only by maximum temperature Tch=150°C Tc=25°C (Our ideal heat dissipation condition)*3
8.5 A 6.9 A
Drain Current (Pulse)
IDP PW≤10μs, duty cycle≤1%
34 A
Allowable Power Dissipation
PD Tc=25°C (Our ideal heat dissipation condition)*3
2.