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2SK4101LS
Ordering number : ENA0745A
2SK4101LS
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Features
• Low ON-resistance, low input capacitance, ultrahigh-speed switching. • High reliability (Adoption of HVP process). • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation
VDSS VGSS IDc*1 IDpack*2
IDP
PD
Limited only by maximum temperature Tc=25°C (SANYO’s ideal heat dissipation condition)*3 PW≤10µs, duty cycle≤1%
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
650
V
±30
V
7
A
6.4
A
28
A
2.
2SK4101LS Datasheet
