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2SK4124 - N-Channel Power MOSFET

Key Features

  • Low ON-resistance, low input capacitance, ultrahigh-speed switching.
  • Adoption of high reliability HVP process.
  • Avalanche resistance guarantee Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% Tc=25°C (Our ideal heat dissipation condition.

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Datasheet Details

Part number 2SK4124
Manufacturer onsemi
File Size 204.76 KB
Description N-Channel Power MOSFET
Datasheet download datasheet 2SK4124 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA0746C 2SK4124 N-Channel Power MOSFET 500V, 20A, 430mΩ, TO-3P-3L http://onsemi.com Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching • Adoption of high reliability HVP process • Avalanche resistance guarantee Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% Tc=25°C (Our ideal heat dissipation condition)*1 500 V ±30 V 20 A 60 A 2.5 W 170 W 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV *1 Our condition is radiation from backside.