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2SK4196LS - N-Channel Power MOSFET

Key Features

  • ON-resistance RDS(on)=1.2Ω (typ. ).
  • 10V drive.
  • Input capacitance Ciss=360pF Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain Current (DC) IDc.
  • 1 IDpack.
  • 2 Limited only by maximum temperature Tch=150°C Tc=25°C (Our ideal heat dissipation condition).
  • 3 5.5 A 5.0 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 21 A Allowabl.

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Datasheet Details

Part number 2SK4196LS
Manufacturer onsemi
File Size 187.37 KB
Description N-Channel Power MOSFET
Datasheet download datasheet 2SK4196LS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1233A 2SK4196LS N-Channel Power MOSFET 500V, 5.5A, 1.56Ω, TO-220F-3FS http://onsemi.com Features • ON-resistance RDS(on)=1.2Ω (typ.) • 10V drive • Input capacitance Ciss=360pF Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain Current (DC) IDc*1 IDpack*2 Limited only by maximum temperature Tch=150°C Tc=25°C (Our ideal heat dissipation condition)*3 5.5 A 5.0 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 21 A Allowable Power Dissipation PD Tc=25°C (Our ideal heat dissipation condition)*3 2.