Datasheet4U Logo Datasheet4U.com

2SK545 - N-Channel JFET

Datasheet Summary

Features

  • Small IGSS.
  • Small Ciss.
  • Ultrasmall Package permitting 2SK545.
  • applied Sets to be Compact.
  • This is a Pb.
  • Free Device.

📥 Download Datasheet

Datasheet preview – 2SK545

Datasheet Details

Part number 2SK545
Manufacturer ON Semiconductor
File Size 112.60 KB
Description N-Channel JFET
Datasheet download datasheet 2SK545 Datasheet
Additional preview pages of the 2SK545 datasheet.

📁 Similar Datasheet

  • 2SK545 - N-Channel MOSFET (Sanyo Semicon Device)
  • 2SK545 - JFET (Unisonic Technologies)
  • 2SK54 - SILICON N-CHANNEL JUNCTION FET (Hitachi Semiconductor)
  • 2SK543 - N-Channel MOSFET (Sanyo Semicon Device)
  • 2SK544 - N-Channel MOSFET (Sanyo Semicon Device)
  • 2SK546 - N-Channel MOSFET (Sanyo Semicon Device)
  • 2SK549 - N-Channel MOSFET Transistor (INCHANGE)
  • 2SK549 - N-Channel MOSFET (Hitachi Semiconductor)
  • 2SK508 - N-Channel MOSFET (NEC)
  • 2SK508 - N-CHANNEL JFET (Unisonic Technologies)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
N-Channel JFET 40 V, 55 to 95 mA, 0.10 ms, CP 2SK545 DATA SHEET www.onsemi.com SC−59 / CP3 CASE 318BJ Features • Small IGSS • Small Ciss • Ultrasmall Package permitting 2SK545−applied Sets to be Compact • This is a Pb−Free Device Applications • Impedance Converter Applications • Infrared Sensor ABSOLUTE MAXIMUM RATINGS (at TA = 25°C) Parameter Symbol Ratings Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Drain Voltage VGDS −40 V Gate Current IG 10 mA Drain Current ID 1 mA Allowable Power Dissipation PD 100 mW Junction Temperature TJ 125 °C Storage Temperature TSTG −55 to +125 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
Published: |