2SK715
Features
- Adoption of FBET Process
- Large yfs
- Small Ciss
- Very Low Noise Figure
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature
Symbol
VDSS VGDS IG ID PD Tj
Tstg
Electrical Connection Marking
2 1 : Source 2 : Gate 3 : Drain
Rank
K715
LOT No.
Ratings 15
--15 10 50
300 125 --55 to +125
Unit V V m A m A m W °C °C
2SK715U-AC 2SK715V-AC 2SK715W-AC
TO-92-3 / SPA-WA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltage
V(BR)GDS IG=--10m A, VDS=0V
Gate-to-Source Leakage Current
IGSS
VGS=--10V, VDS=0V
Zero-Gate Voltage Drain Current
IDSS-
VDS=5V,...
