• Part: 3SK263
  • Description: N-Channnel Dual Gate MOSFET
  • Category: MOSFET
  • Manufacturer: onsemi
  • Size: 348.08 KB
Download 3SK263 Datasheet PDF
onsemi
3SK263
Features - Enhancement type - Small noise figure - Small cross modulation Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate1-to-Source Voltage Gate2-to-Source Voltage Drain Current Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDS VG1S VG2S ID PD Tch Tstg Conditions Ratings 15 ±8 ±8 30 200 125 --55 to +125 Unit V V V m A m W °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Package Dimensions unit : mm (typ) 7014A-006 2.9 0.4 3SK263-5-TG-E Product & Package Information - Package : CP4 - JEITA, JEDEC : SC-61, SC-82AB, SOT-143, SOT-343 - Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TG Marking 0.05 1.1 2.5 0.3 0.5 1.5 0.5 LOT No. RANK LOT No. 12 0.95 0.85 1 : Drain 2 : Source 3 : Gate1 4 :...