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3SK263 - N-Channnel Dual Gate MOSFET

Features

  • Enhancement type.
  • Small noise figure.
  • Small cross modulation Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate1-to-Source Voltage Gate2-to-Source Voltage Drain Current Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDS VG1S VG2S ID PD Tch Tstg Conditions Ratings 15 ±8 ±8 30 200 125 --55 to +125 Unit V V V mA mW °C °C Stresses exceeding those listed in the Maximum Ratings table may dam.

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Datasheet Details

Part number 3SK263
Manufacturer ON Semiconductor
File Size 348.08 KB
Description N-Channnel Dual Gate MOSFET
Datasheet download datasheet 3SK263 Datasheet
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Full PDF Text Transcription

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Ordering number : EN4423D 3SK263 N-Channnel Dual Gate MOSFET 15V,30mA,PG=21dB,NF=1.1dB, CP4 http://onsemi.com Features • Enhancement type • Small noise figure • Small cross modulation Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate1-to-Source Voltage Gate2-to-Source Voltage Drain Current Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDS VG1S VG2S ID PD Tch Tstg Conditions Ratings 15 ±8 ±8 30 200 125 --55 to +125 Unit V V V mA mW °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Package Dimensions unit : mm (typ) 7014A-006 2.9 0.
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