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4N27M - Phototransistor Optocouplers

This page provides the datasheet information for the 4N27M, a member of the 4N25M Phototransistor Optocouplers family.

Datasheet Summary

Description

The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a standard plastic 6 pin dual in

line package.

Features

  • Minimum Current Transfer Ratio at IF = 10 mA, VCE = 10 V:.
  • 10% for 4N27M and 4N28M.
  • 20% for 4N25M and 4N26M.
  • 100% for 4N35M and 4N36M and 4N37M.
  • Safety and Regulatory Approvals:.
  • UL1577, 4,170 VACRMS for 1 Minute.
  • DIN.
  • EN/IEC60747.
  • 5.
  • 5, 850 V Peak Working Insulation Voltage.

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Datasheet preview – 4N27M

Datasheet Details

Part number 4N27M
Manufacturer ON Semiconductor
File Size 328.95 KB
Description Phototransistor Optocouplers
Datasheet download datasheet 4N27M Datasheet
Additional preview pages of the 4N27M datasheet.

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Full PDF Text Transcription

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6-Pin General Purpose Phototransistor Optocouplers 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Description The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a standard plastic 6−pin dual−in−line package. Features • Minimum Current Transfer Ratio at IF = 10 mA, VCE = 10 V: ♦ 10% for 4N27M and 4N28M ♦ 20% for 4N25M and 4N26M ♦ 100% for 4N35M and 4N36M and 4N37M • Safety and Regulatory Approvals: ♦ UL1577, 4,170 VACRMS for 1 Minute ♦ DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage Applications • Power Supply Regulators • Digital Logic Inputs • Microprocessor Inputs DATA SHEET www.onsemi.
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