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50A02SS - Bipolar Transistor

Datasheet Summary

Features

  • Large current capacity.
  • Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=210mΩ[IC=0.5A, IB=50mA].
  • Ultrasmall package facilitates miniaturization in end products.
  • Small ON-resistance (Ron) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEB.

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Datasheet Details

Part number 50A02SS
Manufacturer ON Semiconductor
File Size 424.26 KB
Description Bipolar Transistor
Datasheet download datasheet 50A02SS Datasheet
Additional preview pages of the 50A02SS datasheet.

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    Full PDF Text Transcription

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    Ordering number : EN7491A 50A02SS Bipolar Transistor –50V, –0.4A, Low VCE(sat) PNP Single SSFP http://onsemi.com Applications • Low-frequency Amplifier, high-speed switching small motor drive, muting circuit Features • Large current capacity • Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=210mΩ[IC=0.5A, IB=50mA] • Ultrasmall package facilitates miniaturization in end products • Small ON-resistance (Ron) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Conditions Mounted on a glass epoxy board (20×30×1.
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